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| SBD Type : EC10QS10 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight:0.06g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 20 0.89 1.0 EC10QS10 100 Ta=25 C *1 Ta=52 C *2 50Hz Half Sine Wave Resistive Load Unit V A A A C C 1.57 50Hz Half Sine Wave,1cycle Non-repetitive -40 to +150 -40 to +150 Electrical * Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25C, VRM= VRRM Tj= 25C, IFM= 1.0A *1 *2 Min. Typ. Max. 0.5 0.85 157 108 Unit mA V C /W Rth(j-a) Junction to Ambient *1 Glass Epoxy Substrate Mounted *2 Alumina Substrate Mounted Soldering Lands=2x2mm,Both Sides EC10QS10 OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE EC10QS10 5 INSTANTANEOUS FORWARD CURRENT (A) 2 Tj=25C Tj=150C 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION EC10QS10 D.C. 1.2 AVERAGE FORWARD POWER DISSIPATION (W) 1.0 RECT 180 0.8 HALF SINE WAVE RECT 120 0.6 RECT 60 0.4 0.2 0 0 0.4 0.8 1.2 1.6 AVERAGE FORWARD CURRENT (A) PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 C 5 EC10QS10 PEAK REVERSE CURRENT (mA) 2 1 0 20 40 60 80 100 120 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION EC10QS10 AVERAGE REVERSE POWER DISSIPATION (W) 0.40 D.C. RECT 300 0.30 RECT 240 0.20 RECT 180 HALF SINE WAVE 0.10 0 0 20 40 60 80 100 120 REVERSE VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE A lum ina S ubs tra te M ou nted (La nd= 2x2m m),V R M= 100V EC10QS10 D.C. 1.6 AVERAGE FORWARD CURRENT (A) 1.2 RECT 180. HALF SINE WAVE RECT 120. 0.8 RECT 60. 0.4 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) 0 180 CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. LEAD TEMPERATURE V R M= 100V EC10QS10 D.C. 1.6 AVERAGE FORWARD CURRENT (A) 1.2 RECT 180 HALF SINE WAVE RECT 120 0.8 RECT 60 0.4 0 0 25 50 75 100 125 150 LEAD TEMPERATURE (C) SURGE CURRENT RATINGS f=50Hz,Half Sine Wave,Non-Repetitive,No Load EC10QS10 20 SURGE FORWARD CURRENT (A) 16 12 8 4 0.02s I FSM 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5 C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue 100 EC10QS10 JUNCTION CAPACITANCE (pF) 50 20 10 5 0.5 1 2 5 10 20 50 100 200 REVERSE VOLTAGE (V) |
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